vishay siliconix si5855dc document number: 72232 s10-0547-rev. c, 08-mar-10 www.vishay.com 1 p-channel 1.8 v (g-s) mosfet with schottky diode features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets ? ultra low v f schottky ? si5853dc pin compatible ? compliant to rohs directive 2002/95/ec applications ? charging circuit in portable devices mosfet product summary v ds (v) r ds(on) ( )i d (a) - 20 0.110 at v gs = - 4.5 v - 3.6 0.160 at v gs = - 2.5 v - 3.0 0.240 at v gs = - 1.8 v - 2.4 schottky product summary v ka (v) v f (v) diode forward voltage i f (a) 20 0.375 v at 1 a 1.0 bottom view 1206-8 chipfet ? a a s g k k d d 1 marking code jb xxx lot traceability and date code part # code ordering information: SI5855DC-T1-E3 (lead (pb)-free) si5855dc-t1-ge3 (lead (pb)-free and halogen-free) k a s g d p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. b. see reliability manual for prof ile. the chipfet is a leadless package. the end of the lead terminal is exposed copper (not pl ated) as a result of the singulation process in manufacturi ng. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 s steady state unit drain-source voltage (mosfet) v ds - 20 v reverse voltage (schottky) v ka 20 gate-source voltage (mosfet) v gs 8 continuous drain current (t j = 150 c) (mosfet) a t a = 25 c i d - 3.6 - 2.7 a t a = 85 c - 2.6 - 1.9 pulsed drain current (mosfet) i dm - 10 continuous source current (mosfet diode conduction) a i s - 1.8 - 0.9 average forward current (schottky) i f 1.0 pulsed forward current (schottky) i fm 7 maximum power dissipation (mosfet) a t a = 25 c p d 2.1 1.1 w t a = 85 c 1.1 0.6 maximum power dissipation (schottky) a t a = 25 c 1.9 1.1 t a = 85 c 1.0 0.56 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) b, c 260
www.vishay.com 2 document number: 72232 s10-0547-rev. c, 08-mar-10 vishay siliconix si5855dc notes: a. surface mounted on 1" x 1" fr4 board. notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance ratings parameter device symbol typical maximum unit junction-to-ambient a t 5 s mosfet r thja 50 60 c/w schottky 54 65 steady state mosfet 90 110 schottky 95 115 junction-to-foot steady state mosfet r thjf 30 40 schottky 30 40 mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.45 - 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 85 c - 5 on-state drain current a i d(on) v ds ? 5 v, v gs = - 4.5 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 2.7 a 0.095 0.110 v gs = - 2.5 v, i d = - 2.2 a 0.137 0.160 v gs = - 1.8 v, i d = - 1 a 0.205 0.240 forward transconductance a g fs v ds = - 10 v, i d = - 2.7 a 7s diode forward voltage a v sd i s = - 0.9 a, v gs = 0 v - 0.8 - 1.2 v dynamic b total gate charge q g v ds = - 10 v, v gs = - 4.5 v, i d = - 2.7 a 5.1 7.7 nc gate-source charge q gs 1.2 gate-drain charge q gd 1.0 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 10 i d ? - 1 a, v gen = - 4.5 v, r g = 6 16 25 ns rise time t r 30 45 turn-off delay time t d(off) 30 45 fall time t f 27 40 source-drain reverse recovery time t rr i f = - 0.9 a, di/dt = 100 a/s 20 40 schottky specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit forward voltage drop v f i f = 1 a 0.34 0.375 v i f = 1 a, t j = 125 c 0.255 0.290 maximum reverse leakage current i rm v r = 20 v 0.05 0.500 ma v r = 20 v, t j = 85 c 220 v r = 20 v, t j = 125 c 10 100 junction capacitance c t v r = 10 v 90 pf
document number: 72232 s10-0547-rev. c, 08-mar-10 www.vishay.com 3 vishay siliconix si5855dc mosfet typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 5 v thru 3 v v ds - drain-to-source voltage (v) - drain current (a) i d 1.5 v 2 v 2.5 v - on-resistance ( ) r ds(on) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0246810 i d - drain current (a) v gs = 2.5 v v gs = 4.5 v v gs = 1.8 v 0 1 2 3 4 5 0123456 v ds = 10 v i d = 2.7 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = - 55 c 125 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0 200 400 600 800 048121620 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 2.7 a t j - junction temperature (c) r ds(on) - on-resistance (normalized)
www.vishay.com 4 document number: 72232 s10-0547-rev. c, 08-mar-10 vishay siliconix si5855dc mosfet typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 150 c 10 1 v sd - source-to-drain voltage (v) - source current (a) i s t j = 25 c - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power 0.0 0.1 0.2 0.3 0.4 012345 i d = 2.7 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 30 50 10 20 power (w) time (s) 40 1 100 600 10 10 -1 10 -2 10 -4 10 -3 safe operating area 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse 0.1 i d(on) limited * ds(on) limited by r bvdss limited p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 10 v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified - drain current (a) i d i dm limited p(t) = 1 dc
document number: 72232 s10-0547-rev. c, 08-mar-10 www.vishay.com 5 vishay siliconix si5855dc mosfet typical characteristics 25 c, unless otherwise noted schottky typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance reverse current vs. junction temperature - 50 - 25 0 25 50 75 100 125 150 0.0001 1 100 t j - junction temperature (c) - reverse current (ma) i r 0.001 0.01 0.1 10 20 v 10 v forward voltage drop 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 1 10 v f - forward voltage drop (v) - forward current (a) i f t j = 25 c t j = 150 c
www.vishay.com 6 document number: 72232 s10-0547-rev. c, 08-mar-10 vishay siliconix si5855dc schottky typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72232 . capacitance - junction capacitance (pf) 0 100 200 300 400 500 600 048121620 v ka - reverse voltage (v) c t normalized thermal transient im pedance, junction-to-ambient square wave pulse duration (s) normalized eff ective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 95 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance
package information vishay siliconix document number: 71151 15-jan-04 www.vishay.com 1 1206-8 chipfet c e e 1 e d a 65 7 8 34 2 1 4 l 5678 4321 4 s b 2x 0.10/0.13 r backside view x notes: 1. all dimensions are in millimeaters. 2. mold gate burrs shall not exceed 0.13 mm per side. 3. leadframe to molded body offset is horizontal and vertical shall not exceed 0.08 mm. 4. dimensions exclusive of mold gate burrs. 5. no mold flash allowed on the top and bottom lead surface. detail x c1 millimeters inches dim min nom max min nom max a 1.00 ? 1.10 0.039 ? 0.043 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.1 0.15 0.20 0.004 0.006 0.008 c1 0 ? 0.038 0 ? 0.0015 d 2.95 3.05 3.10 0.116 0.120 0.122 e 1.825 1.90 1.975 0.072 0.075 0.078 e 1 1.55 1.65 1.70 0.061 0.065 0.067 e 0.65 bsc 0.0256 bsc l 0.28 ? 0.42 0.011 ? 0.017 s 0.55 bsc 0.022 bsc 5 nom 5 nom ecn: c-03528?rev. f, 19-jan-04 dwg: 5547
application note 826 vishay siliconix www.vishay.com document number: 72593 2 revision: 21-jan-08 application note recommended minimum pads for 1206-8 chipfet ? 0.080 (2.032) recommended mi nimum pads dimensions in inches/(mm) 0.093 (2.357) 0.036 (0.914) 0.022 (0.559) 0.026 (0.650) 0.016 (0.406) 0.010 (0.244) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
|
